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InAs組成変換基板上への高In組成比InGaAs成長 : エピキタシャル成長IV
名前 / ファイル | ライセンス | アクション |
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081114068.pdf (85.9 kB)
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Item type | 学術雑誌論文 / Journal Article_01(1) | |||||||||||
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公開日 | 2008-11-14 | |||||||||||
タイトル | ||||||||||||
タイトル | InAs組成変換基板上への高In組成比InGaAs成長 : エピキタシャル成長IV | |||||||||||
言語 | ||||||||||||
言語 | jpn | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
タイトル(別言語) | ||||||||||||
その他のタイトル | Growth of In_xGa_<1-x> As on compositions converted InAs substrates | |||||||||||
著者 |
永井, 洋希
× 永井, 洋希× 飯田, 晋× 小山, 忠信× 熊川, 征司
WEKO
2333
× 早川, 泰弘
WEKO
2330
× バラクリシュナン
WEKO
2556
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書誌情報 |
日本結晶成長学会誌 巻 29, 号 2, p. 46-46, 発行日 2002-07-01 |
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出版者 | ||||||||||||
出版者 | 日本結晶成長学会 | |||||||||||
権利情報 | ||||||||||||
権利情報 | (C)日本結晶成長学会: 本文データは学協会の許諾に基づきCiNiiから複製したものである | |||||||||||
NDC | ||||||||||||
主題Scheme | NDC | |||||||||||
主題 | 549 | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 03856275 | |||||||||||
NII論文ID | ||||||||||||
関連タイプ | isIdenticalTo | |||||||||||
識別子タイプ | NAID | |||||||||||
関連識別子 | 110002715573 | |||||||||||
NII書誌ID | ||||||||||||
収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AN00188386 | |||||||||||
フォーマット | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | application/pdf | |||||||||||
著者版フラグ | ||||||||||||
出版タイプ | VoR | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |