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InSb基板中へのGa高速混入機構
http://hdl.handle.net/10297/2769
http://hdl.handle.net/10297/27699eacfb77-53b4-42b1-8263-3f3e0305af66
名前 / ファイル | ライセンス | アクション |
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081114052.pdf (119.9 kB)
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Item type | 学術雑誌論文 / Journal Article_01(1) | |||||||||
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公開日 | 2008-11-14 | |||||||||
タイトル | ||||||||||
タイトル | InSb基板中へのGa高速混入機構 | |||||||||
言語 | ||||||||||
言語 | jpn | |||||||||
資源タイプ | ||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
資源タイプ | journal article | |||||||||
タイトル(別言語) | ||||||||||
その他のタイトル | Mechanism of Rapid Diffusion of Ga into InSb Substrate | |||||||||
著者 |
早川, 泰弘
× 早川, 泰弘
WEKO
2330
× 大津, 弘毅× 正木, みゆき× 高橋, 克巳× 小山, 忠信× 熊川, 征司
WEKO
2333
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書誌情報 |
日本結晶成長学会誌 巻 24, 号 2, p. 227-227, 発行日 1997-07-01 |
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出版者 | ||||||||||
出版者 | 日本結晶成長学会 | |||||||||
権利情報 | ||||||||||
権利情報 | (C)日本結晶成長学会: 本文データは学協会の許諾に基づきCiNiiから複製したものである | |||||||||
NDC | ||||||||||
主題Scheme | NDC | |||||||||
主題 | 549 | |||||||||
ISSN | ||||||||||
収録物識別子タイプ | ISSN | |||||||||
収録物識別子 | 03856275 | |||||||||
NII論文ID | ||||||||||
関連タイプ | isIdenticalTo | |||||||||
識別子タイプ | NAID | |||||||||
関連識別子 | 110002714936 | |||||||||
NII書誌ID | ||||||||||
収録物識別子タイプ | NCID | |||||||||
収録物識別子 | AN00188386 | |||||||||
フォーマット | ||||||||||
内容記述タイプ | Other | |||||||||
内容記述 | application/pdf | |||||||||
著者版フラグ | ||||||||||
出版タイプ | VoR | |||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |