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Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments
名前 / ファイル | ライセンス | アクション |
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110823001.pdf (590.2 kB)
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Item type | 学術雑誌論文 / Journal Article_01(1) | |||||||||||
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公開日 | 2011-08-23 | |||||||||||
タイトル | ||||||||||||
言語 | en | |||||||||||
タイトル | Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments | |||||||||||
言語 | ||||||||||||
言語 | eng | |||||||||||
資源タイプ | ||||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||||
資源タイプ | journal article | |||||||||||
著者 |
Rajesh, G.
× Rajesh, G.× Mukannan, Arivanandhan
WEKO
4606
× Suzuki, N.× Tanaka, Akira
WEKO
458
× Morii, H.× Aoki, T.× Koyama, Tadanobu× Momose, Y.× Ozawa, T.× Inatomi, Y.× Takagi, Y.× Okano, Y.× Hayakawa, Yasuhiro
WEKO
2330
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書誌情報 |
Journal of Crystal Growth 巻 324, 号 1, p. 157-162, 発行日 2011-06-01 |
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出版者 | ||||||||||||
出版者 | Elsevier | |||||||||||
権利情報 | ||||||||||||
権利情報 | Copyright © 2011 Elsevier B.V. All rights reserved. | |||||||||||
NDC | ||||||||||||
主題Scheme | NDC | |||||||||||
主題 | 549 | |||||||||||
抄録 | ||||||||||||
内容記述タイプ | Abstract | |||||||||||
内容記述 | We investigated the dissolution process of GaSb into InSb melt by numerical simulations using the finite volume method. In addition, the dissolution process was in-situ observed by the X-ray penetration method. Rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich structure of sample was considered for the numerical analysis and the same structure of sample was used for the X-ray penetration experiment. The numerical and experimental results were comparatively analysed. From the results, it was found that the quantity of the dissolved GaSb seed (at the low temperature region) was larger than that of the feed (at the high temperature region). The numerical simulation results supported the experimental results well. Both the experiment and the simulation provide deep insight into the dissolution process and composition profile in the solution during the dissolution process of ternary alloy semiconductor crystal growth. | |||||||||||
ISSN | ||||||||||||
収録物識別子タイプ | ISSN | |||||||||||
収録物識別子 | 00220248 | |||||||||||
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収録物識別子タイプ | NCID | |||||||||||
収録物識別子 | AA00696341 | |||||||||||
出版者DOI | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | DOI | |||||||||||
関連識別子 | 10.1016/j.jcrysgro.2011.04.019 | |||||||||||
フォーマット | ||||||||||||
内容記述タイプ | Other | |||||||||||
内容記述 | application/pdf | |||||||||||
著者版フラグ | ||||||||||||
出版タイプ | AM | |||||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||||
出版者版 | ||||||||||||
関連タイプ | isVersionOf | |||||||||||
識別子タイプ | URI | |||||||||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2011.04.019 |