静岡大学学術リポジトリ

シリコンナノ構造を基盤としたドーパント原子デバイスの開発

田部道晴
(2016-05-25) , 静岡大学

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Siナノpn接合を用いたドーパント原子型トンネルダイオード

田部道晴
(2015-06-19) , 静岡大学

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PとBの同時ドーピングによるSiシングルドーパントデバイスの室温動作化

田部道晴
(2012-05-15) , 静岡大学

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少数ドーパントのポテンシャル揺らぎを利用したシリコン単電子転送デバイス

田部道晴
(2012-05-15) , 静岡大学

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Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope

Anwar Miftahul , Kawai Yuya , Moraru Daniel , Nowak Roland , Jablonski Ryszard , Mizuno Takeshi , Tabe Michiharu
Japanese Journal of Applied Physics,50(8),08LB10 (2011-08-22) , Japan Society of Applied Physics , © 2011 The Japan Society of Applied Physics

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Single-electron transfer between two donors in nanoscale thin silicon-on-insulator field-effect transistors

Hamid Earfan , Moraru Daniel , Tarido Juli Cha , Miki Sakito , Mizuno Takeshi , Tabe Michiharu
Applied Physics Letters,97(26),262101-1-262101-3 (2010-12-28) , American Institute of Physics , Copyright © 2010 American Institute of Physics

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Electrical control of capacitance dispersion for single-electron turnstile operation in common-gated junction arrays

Yokoi Kiyohito , Moraru Daniel , Mizuno Takeshi , Tabe Michiharu
Journal of Applied Physics,108(5),053710-1-053710-5 (2010-09-08) , American Institute of Physics , Copyright © 2010 American Institute of Physics.

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Single-Electron Transport through Single Dopants in a Dopant-Rich Environment

Tabe Michiharu , Moraru Daniel , Maciej Ligowski , Miftahul Anwar , Ryszard Jablonski , Ono Yukinori , Mizuno Takeshi
Physical Review Letters,105(1),016803-1-016803-4 (2010-07-02) , American Physical Society , Copyright © 2010 The American Physical Society

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ナノ多重接合系の輸送制御と新機能デバイスの研究

田部道晴
(2010-05-26) , 静岡大学

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Observation of discrete dopant potential and its application to Si single-electron devices

Tabe Michiharu , Moraru Daniel , Ligowski Maciej , Anwar Miftahul , Yokoi Kiyohito , Jablonski Ryszard , Mizuno Takeshi
Thin Solid Films,518(6),S38-S43 (2010-01-01) , Elsevier , Copyright © 2009 Elsevier B.V. All rights reserved.

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Single-Electron Transfer by Inter-Dopant Coupling Tuning in Doped Nanowire Silicon-on-Insulator Field-Effect Transistors

Moraru Daniel , Ligowski Maciej , Yokoi Kiyohito , Mizuno Takeshi , Tabe Michiharu
Applied Physics Express,2(7),071201-1-071201-3 (2009-07) , Japan Society of Applied Physics , Copyright © 2009 The Japan Society of Applied Physics

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シリコン単電子デバイスの時空間輸送制御と新機能の開発

田部道晴
(2009-06-02) , 静岡大学

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Single-Gated Single-Electron Transfer in Nonuniform Arrays of Quantum Dots

Yokoi Kiyohito , Moraru Daniel , Ligowski Maciej , Tabe Michiharu
Japanese Journal of Applied Physics,48(2),024503-1-024503-7 (2009-02) , Japan Society of Applied Physics , Copyright © 2009 The Japan Society of Applied Physics

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Quantized electron transfer through random multiple tunnel junctions in phosphorus-doped silicon nanowires

Ono Yukinori , Inokawa Hiroshi , Tabe Michiharu , Moraru Daniel
Physical Review B,76(7),075332-075332 (2007-08) , American Physical Society , (c)2007 The American Physical Society

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Special issue on 2005 Silicon Nanoelectronics Workshop - Foreword

Tabe Michiharu , Park Byung-Gook
Nanotechnology,5(3),155-156 (2006-05) , Institute of Electrical and Electronics Engineers , (c)2006 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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Single-electron tunneling in a silicon-on-insulator layer embedding an artificial dislocation network

Ishikawa Yasuhiko , Yamamoto Chihiro , Tabe Michiharu
Applied Physics Letters,88(7),073112-073112 (2006-02-17) , American Institute of Physics , (c)2006 American Institute of Physics

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Single-photon-induced random telegraph signal in a two-dimensional multiple-tunnel-junction array

Nuryadi Ratno , Ishikawa Yasuhiko , Tabe Michiharu
Physical Review B,73(4),045310-045310 (2006-01) , American Physical Society , (c)2006 The American Physical Society

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Thermally-induced formation of Si wire array on an ultrathin (111) silicon-on-insulator substrate

Burhanudin Zainal A. , Nuryadi Ratno , Ishikawa Yasuhiko , Tabe Michiharu , Ono Yukinori
Applied Physics Letters,87(12),121905-121905 (2005-09-12) , American Institute of Physics , (c)2005 American Institute of Physics

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Current fluctuation in single-hole transport through a two-dimensional Si multidot

Nuryadi Ratno , Ikeda Hiroya , Ishikawa Yasuhiko , Tabe Michiharu
Applied Physics Letters,86(13),133106-133106 (2005-03-22) , American Institute of Physics , (c)2005 American Institute of Physics

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Ambipolar Coulomb Blockade Characteristics in a Two-Dimensional Si Multidot Device

Nuryadi Ratno , Ikeda Hiroya , Ishikawa Yasuhiko , Tabe Michiharu
IEEE Transactions on Nanotechnology,2(4),231-235 (2003-12) , Institute of Electrical and Electronics Engineers , (c)2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE.

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