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液相成長法による高品質InGaAs横方向ブリッジ成長
http://hdl.handle.net/10297/1492
http://hdl.handle.net/10297/14922c7251cc-8fd0-49c4-b2d4-f358f7f46273
名前 / ファイル | ライセンス | アクション |
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22-0156-204.pdf (50.7 kB)
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22-0156.pdf (323.3 kB)
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Item type | その他 / Others(1) | |||||
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公開日 | 2008-04-11 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | 液相成長法による高品質InGaAs横方向ブリッジ成長 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Lateral Growth of High Quality InGaAs Bridge Layers by Liquid Phase Epitaxy | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_1843 | |||||
資源タイプ | other | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
飯田, 晋
× 飯田, 晋 |
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書誌情報 |
ja : 静岡大学大学院電子科学研究科研究報告 巻 22, p. 156-158, 発行日 2001-03-30 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 静岡大学大学院電子科学研究科 | |||||
NDC | ||||||
主題Scheme | NDC | |||||
主題 | 541 | |||||
注記 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 博士学位論文の要旨 学位記番号:工博甲第202号 | |||||
報告番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 甲第219号 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 03885070 | |||||
NII書誌ID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00103168 | |||||
NDL書誌ID | ||||||
関連名称 | 000000357036 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |