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Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy
http://hdl.handle.net/10297/5644
http://hdl.handle.net/10297/5644f4d552f4-cfb1-4aca-ba60-32072fdd6fbb
名前 / ファイル | ライセンス | アクション |
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110520001.pdf (2.3 MB)
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Item type | 学術雑誌論文 / Journal Article_01(1) | |||||||
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公開日 | 2011-05-22 | |||||||
タイトル | ||||||||
言語 | en | |||||||
タイトル | Orientation-dependent epitaxial growth of GaAs by current-controlled liquid phase epitaxy | |||||||
言語 | ||||||||
言語 | eng | |||||||
資源タイプ | ||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||
資源タイプ | journal article | |||||||
著者 |
Mouleeswaran, D.
× Mouleeswaran, D.× Koyama, T.× Hayakawa, Yasuhiro
WEKO
2330
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書誌情報 |
Journal of Crystal Growth 巻 321, 号 1, p. 85-90, 発行日 2011-04-15 |
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出版者 | ||||||||
出版者 | Elsevier | |||||||
権利情報 | ||||||||
権利情報 | Copyright © 2011 Elsevier B.V. All rights reserved. | |||||||
NDC | ||||||||
主題Scheme | NDC | |||||||
主題 | 549 | |||||||
抄録 | ||||||||
内容記述タイプ | Abstract | |||||||
内容記述 | The orientation dependence of the selective epitaxial growth of Gallium Arsenide (GaAs) has been investigated to achieve a thick epitaxial layer for application to X-ray detectors. Selective epitaxial growth was carried out on patterned GaAs with [0 1 1], [0 1 2], [0 1 0], [0 1 −2], [0 1 −1] and their equivalent seed orientations by current-controlled liquid phase epitaxy (CCLPE). SiO2 was used as a mask layer to fabricate the various seed orientations on the Si-doped GaAs (1 0 0) substrate and various growth periods and current densities were considered. Solute transport in the solution was enhanced by the electromigration of solute by an applied DC electric current, which caused an incremental growth in vertical and lateral directions in all orientations. The highest vertical thickness of 268 μm in the [0 1 −1] orientation and the largest lateral growth of 318 μm in the [0 1 2] orientation were achieved at 7.5 A cm−2 current density for 6 h. The seed aligned in the [0 1 2] orientation was favorable for high lateral growth of GaAs. The [0 1 1], [0 1 0] and [0 1 −2] seed orientations were suitable for application in a GaAs X-ray detector. | |||||||
ISSN | ||||||||
収録物識別子タイプ | ISSN | |||||||
収録物識別子 | 00220248 | |||||||
NII書誌ID | ||||||||
収録物識別子タイプ | NCID | |||||||
収録物識別子 | AA00696341 | |||||||
出版者DOI | ||||||||
関連タイプ | isVersionOf | |||||||
識別子タイプ | DOI | |||||||
関連識別子 | 10.1016/j.jcrysgro.2011.02.026 | |||||||
フォーマット | ||||||||
内容記述タイプ | Other | |||||||
内容記述 | application/pdf | |||||||
著者版フラグ | ||||||||
出版タイプ | AM | |||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||
出版者版 | ||||||||
関連タイプ | isVersionOf | |||||||
識別子タイプ | URI | |||||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2011.02.026 |