WEKO3
アイテム
{"_buckets": {"deposit": "85b4d59f-1e49-4051-a928-1904dbc475a8"}, "_deposit": {"created_by": 3, "id": "4881", "owners": [3], "pid": {"revision_id": 0, "type": "depid", "value": "4881"}, "status": "published"}, "_oai": {"id": "oai:shizuoka.repo.nii.ac.jp:00004881", "sets": ["223"]}, "author_link": ["5037", "5036", "2330", "5038", "1899", "4606"], "item_26_biblio_info_5": {"attribute_name": "書誌情報", "attribute_value_mlt": [{"bibliographicIssueDates": {"bibliographicIssueDate": "2011-04-15", "bibliographicIssueDateType": "Issued"}, "bibliographicIssueNumber": "1", "bibliographicPageEnd": "28", "bibliographicPageStart": "24", "bibliographicVolumeNumber": "321", "bibliographic_titles": [{"bibliographic_title": "Journal of Crystal Growth"}]}]}, "item_26_description_2": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"subitem_description": "Journal Article", "subitem_description_type": "Other"}]}, "item_26_description_30": {"attribute_name": "フォーマット", "attribute_value_mlt": [{"subitem_description": "application/pdf", "subitem_description_type": "Other"}]}, "item_26_description_9": {"attribute_name": "抄録", "attribute_value_mlt": [{"subitem_description": "The intensity of the infrared absorption band at 1107 cm−1, related to interstitial oxygen (Oi) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZ–Si crystals. In contrast, the number of precipitates observed on the etched surfaces of CZ–Si wafers increased as the Ge concentration increased. From an energy dispersive X-ray (EDX) analysis, O was observed to be one of the major components of the precipitates. Moreover, Ge was found as one of the components in the precipitate observed on the heavily Ge (\u003e1×1018 cm−3) codoped CZ–Si wafers. These results suggest that the grown-in O precipitates increase as the Oi concentration decreases when the Ge concentration increases in the Si crystal. The Ge-vacancy (V) complex in the Si lattice probably acted as a heterogeneous nucleation center and may enhanced the grown-in O precipitates thereby reducing the dissolved Oi concentration in the Si lattice.", "subitem_description_type": "Abstract"}]}, "item_26_full_name_3": {"attribute_name": "提供者", "attribute_value_mlt": [{"nameIdentifiers": [{"nameIdentifier": "4606", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "50451620", "nameIdentifierScheme": "KAKEN - 研究者検索", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000050451620/"}, {"nameIdentifier": "4606", "nameIdentifierScheme": "wekoID", "nameIdentifierURI": "https://shizuoka.repo.nii.ac.jp/?action=pages_view_main\u0026active_action=repository_view_main_item_snippet\u0026meta=\u0026wekoAuthorId=4606\u0026count=20\u0026order=16\u0026pn=1\u0026page_id=13\u0026block_id=21"}, {"nameIdentifier": "e3590a25-00b6-400e-8a66-b37ecdc40a8e", "nameIdentifierScheme": "著者リンク", "nameIdentifierURI": "http://uni.lib.shizuoka.ac.jp/Record/e3590a25-00b6-400e-8a66-b37ecdc40a8e"}], "names": [{"name": "Arivanandhan, Mukannan"}]}]}, "item_26_publisher_6": {"attribute_name": "出版者", "attribute_value_mlt": [{"subitem_publisher": "Elsevier"}]}, "item_26_relation_28": {"attribute_name": "出版者DOI", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "10.1016/j.jcrysgro.2011.02.028", "subitem_relation_type_select": "DOI"}}]}, "item_26_relation_34": {"attribute_name": "出版者版", "attribute_value_mlt": [{"subitem_relation_type": "isVersionOf", "subitem_relation_type_id": {"subitem_relation_type_id_text": "https://doi.org/10.1016/j.jcrysgro.2011.02.028", "subitem_relation_type_select": "URI"}}]}, "item_26_rights_7": {"attribute_name": "権利", "attribute_value_mlt": [{"subitem_rights": "Copyright © 2011 Elsevier B.V. All rights reserved."}]}, "item_26_source_id_19": {"attribute_name": "ISSN", "attribute_value_mlt": [{"subitem_source_identifier": "00220248", "subitem_source_identifier_type": "ISSN"}]}, "item_26_source_id_23": {"attribute_name": "NII書誌ID", "attribute_value_mlt": [{"subitem_source_identifier": "AA00696341", "subitem_source_identifier_type": "NCID"}]}, "item_26_subject_8": {"attribute_name": "NDC", "attribute_value_mlt": [{"subitem_subject": "549", "subitem_subject_scheme": "NDC"}]}, "item_26_version_type_32": {"attribute_name": "著者版フラグ", "attribute_value_mlt": [{"subitem_version_resource": "http://purl.org/coar/version/c_ab4af688f83e57aa", "subitem_version_type": "AM"}]}, "item_creator": {"attribute_name": "著者", "attribute_type": "creator", "attribute_value_mlt": [{"creatorNames": [{"creatorName": "Arivanandhan, Mukannan"}], "nameIdentifiers": [{"nameIdentifier": "4606", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "50451620", "nameIdentifierScheme": "KAKEN - 研究者検索", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000050451620/"}, {"nameIdentifier": "4606", "nameIdentifierScheme": "wekoID", "nameIdentifierURI": "https://shizuoka.repo.nii.ac.jp/?action=pages_view_main\u0026active_action=repository_view_main_item_snippet\u0026meta=\u0026wekoAuthorId=4606\u0026count=20\u0026order=16\u0026pn=1\u0026page_id=13\u0026block_id=21"}, {"nameIdentifier": "e3590a25-00b6-400e-8a66-b37ecdc40a8e", "nameIdentifierScheme": "著者リンク", "nameIdentifierURI": "http://uni.lib.shizuoka.ac.jp/Record/e3590a25-00b6-400e-8a66-b37ecdc40a8e"}]}, {"creatorNames": [{"creatorName": "Gotoh, Raira"}], "nameIdentifiers": [{"nameIdentifier": "5036", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Fujiwara, Kozo"}], "nameIdentifiers": [{"nameIdentifier": "5037", "nameIdentifierScheme": "WEKO"}]}, {"creatorNames": [{"creatorName": "Ozawa, Tetsuo"}], "nameIdentifiers": [{"nameIdentifier": "1899", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "1899", "nameIdentifierScheme": "wekoID", "nameIdentifierURI": "https://shizuoka.repo.nii.ac.jp/?action=pages_view_main\u0026active_action=repository_view_main_item_snippet\u0026meta=\u0026wekoAuthorId=1899\u0026count=20\u0026order=16\u0026pn=1\u0026page_id=13\u0026block_id=21"}, {"nameIdentifier": "c7ef574d-a0f5-4ee1-a4cb-55fc729f2acb", "nameIdentifierScheme": "著者リンク", "nameIdentifierURI": "http://uni.lib.shizuoka.ac.jp/Record/c7ef574d-a0f5-4ee1-a4cb-55fc729f2acb"}]}, {"creatorNames": [{"creatorName": "Hayakawa, Yasuhiro"}], "nameIdentifiers": [{"nameIdentifier": "2330", "nameIdentifierScheme": "WEKO"}, {"nameIdentifier": "00115453", "nameIdentifierScheme": "KAKEN - 研究者検索", "nameIdentifierURI": "https://nrid.nii.ac.jp/ja/nrid/1000000115453/"}, {"nameIdentifier": "2330", "nameIdentifierScheme": "wekoID", "nameIdentifierURI": "https://shizuoka.repo.nii.ac.jp/?action=pages_view_main\u0026active_action=repository_view_main_item_snippet\u0026meta=\u0026wekoAuthorId=2330\u0026count=20\u0026order=16\u0026pn=1\u0026page_id=13\u0026block_id=21"}, {"nameIdentifier": "43c2edea-65d5-4ce4-83b0-961748de2eb4", "nameIdentifierScheme": "著者リンク", "nameIdentifierURI": "http://uni.lib.shizuoka.ac.jp/Record/43c2edea-65d5-4ce4-83b0-961748de2eb4"}]}, {"creatorNames": [{"creatorName": "Uda, Satoshi"}], "nameIdentifiers": [{"nameIdentifier": "5038", "nameIdentifierScheme": "WEKO"}]}]}, "item_files": {"attribute_name": "ファイル情報", "attribute_type": "file", "attribute_value_mlt": [{"accessrole": "open_date", "date": [{"dateType": "Available", "dateValue": "2017-12-14"}], "displaytype": "detail", "download_preview_message": "", "file_order": 0, "filename": "110520002.pdf", "filesize": [{"value": "441.5 kB"}], "format": "application/pdf", "future_date_message": "", "is_thumbnail": false, "licensetype": "license_free", "mimetype": "application/pdf", "size": 441500.0, "url": {"label": "110520002.pdf", "url": "https://shizuoka.repo.nii.ac.jp/record/4881/files/110520002.pdf"}, "version_id": "19b6f401-2953-40b2-ae93-3fbc3a7a2961"}]}, "item_language": {"attribute_name": "言語", "attribute_value_mlt": [{"subitem_language": "eng"}]}, "item_resource_type": {"attribute_name": "資源タイプ", "attribute_value_mlt": [{"resourcetype": "journal article", "resourceuri": "http://purl.org/coar/resource_type/c_6501"}]}, "item_title": "The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon", "item_titles": {"attribute_name": "タイトル", "attribute_value_mlt": [{"subitem_title": "The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon", "subitem_title_language": "en"}]}, "item_type_id": "26", "owner": "3", "path": ["223"], "permalink_uri": "http://hdl.handle.net/10297/5646", "pubdate": {"attribute_name": "公開日", "attribute_value": "2011-05-22"}, "publish_date": "2011-05-22", "publish_status": "0", "recid": "4881", "relation": {}, "relation_version_is_last": true, "title": ["The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon"], "weko_shared_id": 3}
The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon
http://hdl.handle.net/10297/5646
http://hdl.handle.net/10297/56463ca094b0-0f3c-4b63-b1c1-f0bc4695fcfb
名前 / ファイル | ライセンス | アクション |
---|---|---|
110520002.pdf (441.5 kB)
|
|
Item type | 学術雑誌論文 / Journal Article_01(1) | |||||||||
---|---|---|---|---|---|---|---|---|---|---|
公開日 | 2011-05-22 | |||||||||
タイトル | ||||||||||
言語 | en | |||||||||
タイトル | The impact of Ge codoping on grown-in O precipitates in Ga-doped Czochralski-silicon | |||||||||
言語 | ||||||||||
言語 | eng | |||||||||
資源タイプ | ||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
資源タイプ | journal article | |||||||||
著者 |
Arivanandhan, Mukannan
× Arivanandhan, Mukannan
WEKO
4606
× Gotoh, Raira× Fujiwara, Kozo× Ozawa, Tetsuo× Hayakawa, Yasuhiro
WEKO
2330
× Uda, Satoshi |
|||||||||
書誌情報 |
Journal of Crystal Growth 巻 321, 号 1, p. 24-28, 発行日 2011-04-15 |
|||||||||
出版者 | ||||||||||
出版者 | Elsevier | |||||||||
権利情報 | ||||||||||
権利情報 | Copyright © 2011 Elsevier B.V. All rights reserved. | |||||||||
NDC | ||||||||||
主題Scheme | NDC | |||||||||
主題 | 549 | |||||||||
抄録 | ||||||||||
内容記述タイプ | Abstract | |||||||||
内容記述 | The intensity of the infrared absorption band at 1107 cm−1, related to interstitial oxygen (Oi) concentration, decreased as the Ge concentration increased in Ga and Ge codoped CZ–Si crystals. In contrast, the number of precipitates observed on the etched surfaces of CZ–Si wafers increased as the Ge concentration increased. From an energy dispersive X-ray (EDX) analysis, O was observed to be one of the major components of the precipitates. Moreover, Ge was found as one of the components in the precipitate observed on the heavily Ge (>1×1018 cm−3) codoped CZ–Si wafers. These results suggest that the grown-in O precipitates increase as the Oi concentration decreases when the Ge concentration increases in the Si crystal. The Ge-vacancy (V) complex in the Si lattice probably acted as a heterogeneous nucleation center and may enhanced the grown-in O precipitates thereby reducing the dissolved Oi concentration in the Si lattice. | |||||||||
ISSN | ||||||||||
収録物識別子タイプ | ISSN | |||||||||
収録物識別子 | 00220248 | |||||||||
NII書誌ID | ||||||||||
収録物識別子タイプ | NCID | |||||||||
収録物識別子 | AA00696341 | |||||||||
出版者DOI | ||||||||||
関連タイプ | isVersionOf | |||||||||
識別子タイプ | DOI | |||||||||
関連識別子 | 10.1016/j.jcrysgro.2011.02.028 | |||||||||
フォーマット | ||||||||||
内容記述タイプ | Other | |||||||||
内容記述 | application/pdf | |||||||||
著者版フラグ | ||||||||||
出版タイプ | AM | |||||||||
出版タイプResource | http://purl.org/coar/version/c_ab4af688f83e57aa | |||||||||
出版者版 | ||||||||||
関連タイプ | isVersionOf | |||||||||
識別子タイプ | URI | |||||||||
関連識別子 | https://doi.org/10.1016/j.jcrysgro.2011.02.028 |