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A Compact Analytical Model for Asymmetric Single-Electron Tunneling Transistors
http://hdl.handle.net/10297/1118
http://hdl.handle.net/10297/111825a20b62-f3b5-49f8-bb22-8bb8be8d33d4
名前 / ファイル | ライセンス | アクション |
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080328002.pdf (513.6 kB)
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Item type | 学術雑誌論文 / Journal Article_01(1) | |||||||
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公開日 | 2008-03-28 | |||||||
タイトル | ||||||||
言語 | en | |||||||
タイトル | A Compact Analytical Model for Asymmetric Single-Electron Tunneling Transistors | |||||||
言語 | ||||||||
言語 | eng | |||||||
資源タイプ | ||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||
資源タイプ | journal article | |||||||
著者 |
Inokawa, Hiroshi
× Inokawa, Hiroshi
WEKO
816
× Takahashi, Yasuo |
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書誌情報 |
Electron Devices 巻 50, 号 2, p. 455-461, 発行日 2003-02 |
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出版者 | ||||||||
出版者 | Institute of Electrical and Electronics Engineers | |||||||
権利情報 | ||||||||
権利情報 | (c)2003 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. | |||||||
NDC | ||||||||
主題Scheme | NDC | |||||||
主題 | 540 | |||||||
ISSN | ||||||||
収録物識別子タイプ | ISSN | |||||||
収録物識別子 | 00189383 | |||||||
EISSN | ||||||||
収録物識別子タイプ | ISSN | |||||||
収録物識別子 | 15579646 | |||||||
NII書誌ID | ||||||||
収録物識別子タイプ | NCID | |||||||
収録物識別子 | AA00667820 | |||||||
出版者DOI | ||||||||
関連タイプ | isIdenticalTo | |||||||
識別子タイプ | DOI | |||||||
関連識別子 | 10.1109/TED.2002.808554 | |||||||
フォーマット | ||||||||
内容記述タイプ | Other | |||||||
内容記述 | application/pdf | |||||||
著者版フラグ | ||||||||
出版タイプ | VoR | |||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |