0.3 M BaTiO3 (BT) precursor solution was prepared by the modified CSD, in which partially hydrolyzed Ti-alkoxide and Ba precursor solution was reacted in iced water bath to prepare the highly polymerized BT precursor solution. The BT precursor solution was spin-coated on a Pt/Ti/SiO2/Si substrate with and without (100)-oriented LaNiO3 (LNO) thin film electrode. In addition, effect of the pre-annealing at 600°C in O2 atmosphere was elucidated by measuring the electrical properties of the resulting BT thin films deposited by the different annealing process. The results clearly indicated that the 600°C pre-annealing and the LNO thin film electrode are effective to enhance the electrical properties of the resultant BT thin films from the precursor solution by the partial hydrolysis method.
Microstructure and electrical properties of BaTiO3 thin films by modified CSD
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