{"created":"2023-07-25T10:30:39.484052+00:00","id":1518,"links":{},"metadata":{"_buckets":{"deposit":"d0e0b420-f4ab-4bcb-9d60-ecfb44729ce0"},"_deposit":{"created_by":3,"id":"1518","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"1518"},"status":"published"},"_oai":{"id":"oai:shizuoka.repo.nii.ac.jp:00001518","sets":["77:220"]},"author_link":["1397","1328"],"item_26_alternative_title_1":{"attribute_name":"その他のタイトル","attribute_value_mlt":[{"subitem_alternative_title":"The Influence of the Configuration to the Performance of Thermoelectric Elements made by SiGe p-type and n-type semiconductors"}]},"item_26_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2003-08-05","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"1","bibliographicPageEnd":"222","bibliographicPageStart":"221","bibliographicVolumeNumber":"2003","bibliographic_titles":[{"bibliographic_title":"年次大会講演論文集"}]}]},"item_26_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_26_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"日本機械学会"}]},"item_26_relation_22":{"attribute_name":"NII論文ID","attribute_value_mlt":[{"subitem_relation_type":"isIdenticalTo","subitem_relation_type_id":{"subitem_relation_type_id_text":"110002524943","subitem_relation_type_select":"NAID"}}]},"item_26_rights_7":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"社団法人日本機械学会: 本文データは学協会の許諾に基づきCiNiiから複製したものである"}]},"item_26_source_id_23":{"attribute_name":"NII書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AA11461871","subitem_source_identifier_type":"NCID"}]},"item_26_subject_8":{"attribute_name":"NDC","attribute_value_mlt":[{"subitem_subject":"531","subitem_subject_scheme":"NDC"}]},"item_26_version_type_32":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"辻, 知章"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"野田, 直剛"}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-12-14"}],"displaytype":"detail","filename":"080521015.pdf","filesize":[{"value":"221.7 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"080521015.pdf","url":"https://shizuoka.repo.nii.ac.jp/record/1518/files/080521015.pdf"},"version_id":"809f764b-f229-44ec-a31e-93e6bf263130"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"823 SiGe p 型と n 型半導体を焦結接合により製作した熱電変換素子の形状が効率に及す影響","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"823 SiGe p 型と n 型半導体を焦結接合により製作した熱電変換素子の形状が効率に及す影響"}]},"item_type_id":"26","owner":"3","path":["220"],"pubdate":{"attribute_name":"公開日","attribute_value":"2008-05-22"},"publish_date":"2008-05-22","publish_status":"0","recid":"1518","relation_version_is_last":true,"title":["823 SiGe p 型と n 型半導体を焦結接合により製作した熱電変換素子の形状が効率に及す影響"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-02-14T02:16:44.291157+00:00"}