@article{oai:shizuoka.repo.nii.ac.jp:00005737,
 author = {Rajesh, G. and Mukannan, Arivanandhan and Suzuki, N. and Tanaka, Akira and Morii, H. and Aoki, T. and Koyama, Tadanobu and Momose, Y. and Ozawa, T. and Inatomi, Y. and Takagi, Y. and Okano, Y. and Hayakawa, Yasuhiro},
 issue = {1},
 journal = {Journal of Crystal Growth},
 month = {Jun},
 note = {application/pdf, We investigated the dissolution process of GaSb into InSb melt by numerical simulations using the finite volume method. In addition, the dissolution process was in-situ observed by the X-ray penetration method. Rectangular shaped GaSb (seed)/InSb/GaSb (feed) sandwich structure of sample was considered for the numerical analysis and the same structure of sample was used for the X-ray penetration experiment. The numerical and experimental results were comparatively analysed. From the results, it was found that the quantity of the dissolved GaSb seed (at the low temperature region) was larger than that of the feed (at the high temperature region). The numerical simulation results supported the experimental results well. Both the experiment and the simulation provide deep insight into the dissolution process and composition profile in the solution during the dissolution process of ternary alloy semiconductor crystal growth.},
 pages = {157--162},
 title = {Effects of solutal convection on the dissolution of GaSb into InSb melt and solute transport mechanism in InGaSb solution: Numerical simulations and in-situ observation experiments},
 volume = {324},
 year = {2011}
}