{"created":"2023-07-25T10:34:12.973522+00:00","id":5745,"links":{},"metadata":{"_buckets":{"deposit":"580fe8d8-8a4f-440f-8350-27e5d9638d0c"},"_deposit":{"created_by":3,"id":"5745","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5745"},"status":"published"},"_oai":{"id":"oai:shizuoka.repo.nii.ac.jp:00005745","sets":["77:220"]},"author_link":["3112","3109","3113","5480","3121"],"item_26_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2010-07-26","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"212","bibliographicPageStart":"209","bibliographicVolumeNumber":"445","bibliographic_titles":[{"bibliographic_title":"Key Engineering Materials"}]}]},"item_26_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_26_description_9":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"InN belongs to the III-group nitride materials and is known to have a low decomposition temperature which causes intractable grain growth compared to the other nitrides, GaN, AlN, etc. We prepared InNs with a flower-like shape as well as film structure by Atmospheric Pressure Halide CVD process, in which InN is synthesized by CVD under atmospheric pressure. In the present study, growth mechanisms of the flower structured InN prepared on Si(100) and a-plane sapphire substrates is reported.","subitem_description_type":"Abstract"}]},"item_26_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Materials Science and Engineering"}]},"item_26_relation_28":{"attribute_name":"出版者DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.4028/www.scientific.net/KEM.445.209","subitem_relation_type_select":"DOI"}}]},"item_26_relation_29":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://www.scientific.net/KEM"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://www.scientific.net/KEM","subitem_relation_type_select":"URI"}}]},"item_26_source_id_19":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"10139826","subitem_source_identifier_type":"ISSN"}]},"item_26_source_id_20":{"attribute_name":"EISSN","attribute_value_mlt":[{"subitem_source_identifier":"16629795","subitem_source_identifier_type":"ISSN"}]},"item_26_source_id_23":{"attribute_name":"NII書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AA10697012","subitem_source_identifier_type":"NCID"}]},"item_26_subject_8":{"attribute_name":"NDC","attribute_value_mlt":[{"subitem_subject":"431","subitem_subject_scheme":"NDC"}]},"item_26_version_type_32":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Sakamoto, Naonori"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Sugiura, Haruka"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Fu, De Sheng"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Wakiya, Naoki"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Suzuki, Hisao"}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-12-15"}],"displaytype":"detail","filename":"110902001.pdf","filesize":[{"value":"521.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"110902001.pdf","url":"https://shizuoka.repo.nii.ac.jp/record/5745/files/110902001.pdf"},"version_id":"8cfd16db-ea8c-4e78-ab7c-de46e21adb53"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Effect of Substrate on Growth Mechanism of Flower Structured InN Fabricated by APHCVD","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Effect of Substrate on Growth Mechanism of Flower Structured InN Fabricated by APHCVD","subitem_title_language":"en"}]},"item_type_id":"26","owner":"3","path":["220"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-09-05"},"publish_date":"2011-09-05","publish_status":"0","recid":"5745","relation_version_is_last":true,"title":["Effect of Substrate on Growth Mechanism of Flower Structured InN Fabricated by APHCVD"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-02-14T02:25:02.597033+00:00"}