{"created":"2023-07-25T10:34:13.761351+00:00","id":5762,"links":{},"metadata":{"_buckets":{"deposit":"e43bb8c3-5110-45b5-8867-749476eda3fa"},"_deposit":{"created_by":3,"id":"5762","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"5762"},"status":"published"},"_oai":{"id":"oai:shizuoka.repo.nii.ac.jp:00005762","sets":["122:223"]},"author_link":["5510","817","4376","5511","2120","5509","812"],"item_26_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2011-08-22","bibliographicIssueDateType":"Issued"},"bibliographicIssueNumber":"8","bibliographicPageStart":"08LB10","bibliographicVolumeNumber":"50","bibliographic_titles":[{"bibliographic_title":"Japanese Journal of Applied Physics"}]}]},"item_26_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_26_description_9":{"attribute_name":"抄録","attribute_value_mlt":[{"subitem_description":"Kelvin probe force microscopy (KFM) working at low temperatures (13 K) is used to study local electronic potential fluctuations induced by individual phosphorus donors. Electronic potential maps were measured at the surface of thin phosphorus-doped channel of silicon-on-insulator field-effect transistors for different values of backgate voltage. We observed local changes of the potential profile with increasing backgate voltage, indicating electron injection in the channel. Single-step changes in the depth of the fine potential wells, observed by changing backgate voltage, are ascribed to single-electron charging in individual donors. For clusters of donors, with overlapped potential wells, electron charging occurs gradually, without single-step behavior, as the backgate voltage becomes more positive.","subitem_description_type":"Abstract"}]},"item_26_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"Japan Society of Applied Physics"}]},"item_26_relation_28":{"attribute_name":"出版者DOI","attribute_value_mlt":[{"subitem_relation_type":"isVersionOf","subitem_relation_type_id":{"subitem_relation_type_id_text":"10.1143/JJAP.50.08LB10","subitem_relation_type_select":"DOI"}}]},"item_26_relation_29":{"attribute_name":"関連サイト","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"http://jjap.jsap.jp/link?JJAP/50/08LB10/"}],"subitem_relation_type_id":{"subitem_relation_type_id_text":"http://jjap.jsap.jp/link?JJAP/50/08LB10/","subitem_relation_type_select":"URI"}}]},"item_26_rights_7":{"attribute_name":"権利","attribute_value_mlt":[{"subitem_rights":"© 2011 The Japan Society of Applied Physics"}]},"item_26_source_id_19":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"00214922","subitem_source_identifier_type":"ISSN"}]},"item_26_source_id_20":{"attribute_name":"EISSN","attribute_value_mlt":[{"subitem_source_identifier":"13474065","subitem_source_identifier_type":"ISSN"}]},"item_26_source_id_23":{"attribute_name":"NII書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AA12295836","subitem_source_identifier_type":"NCID"}]},"item_26_subject_8":{"attribute_name":"NDC","attribute_value_mlt":[{"subitem_subject":"549","subitem_subject_scheme":"NDC"}]},"item_26_version_type_32":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_ab4af688f83e57aa","subitem_version_type":"AM"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"Anwar, Miftahul"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Kawai, Yuya"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Moraru, Daniel"}],"nameIdentifiers":[{},{},{},{}]},{"creatorNames":[{"creatorName":"Nowak, Roland"}],"nameIdentifiers":[{}]},{"creatorNames":[{"creatorName":"Jablonski, Ryszard"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Mizuno, Takeshi"}],"nameIdentifiers":[{},{},{}]},{"creatorNames":[{"creatorName":"Tabe, Michiharu"}],"nameIdentifiers":[{},{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-12-15"}],"displaytype":"detail","filename":"111004001.pdf","filesize":[{"value":"689.4 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"111004001.pdf","url":"https://shizuoka.repo.nii.ac.jp/record/5762/files/111004001.pdf"},"version_id":"0a084ee9-39b7-4aed-b517-4fbe6c9b92e9"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"eng"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"journal article","resourceuri":"http://purl.org/coar/resource_type/c_6501"}]},"item_title":"Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope","subitem_title_language":"en"}]},"item_type_id":"26","owner":"3","path":["223"],"pubdate":{"attribute_name":"公開日","attribute_value":"2011-10-04"},"publish_date":"2011-10-04","publish_status":"0","recid":"5762","relation_version_is_last":true,"title":["Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-02-14T03:02:10.168094+00:00"}