{"created":"2023-07-25T10:30:07.693695+00:00","id":913,"links":{},"metadata":{"_buckets":{"deposit":"70372fa8-20e9-4773-9794-0e5bd79a8f74"},"_deposit":{"created_by":3,"id":"913","owners":[3],"pid":{"revision_id":0,"type":"depid","value":"913"},"status":"published"},"_oai":{"id":"oai:shizuoka.repo.nii.ac.jp:00000913","sets":["80:81:227"]},"author_link":["907","907"],"control_number":"913","item_29_biblio_info_5":{"attribute_name":"書誌情報","attribute_value_mlt":[{"bibliographicIssueDates":{"bibliographicIssueDate":"2007-03-22","bibliographicIssueDateType":"Issued"},"bibliographicPageEnd":"112","bibliographicPageStart":"110","bibliographicVolumeNumber":"28","bibliographic_titles":[{"bibliographic_title":"静岡大学大学院電子科学研究科研究報告","bibliographic_titleLang":"ja"}]}]},"item_29_description_10":{"attribute_name":"注記","attribute_value_mlt":[{"subitem_description":"博士学位論文の要旨 学位記番号:工博甲第282号","subitem_description_type":"Other"}]},"item_29_description_16":{"attribute_name":"報告番号","attribute_value_mlt":[{"subitem_description":"甲第453号","subitem_description_type":"Other"}]},"item_29_description_30":{"attribute_name":"フォーマット","attribute_value_mlt":[{"subitem_description":"application/pdf","subitem_description_type":"Other"}]},"item_29_publisher_6":{"attribute_name":"出版者","attribute_value_mlt":[{"subitem_publisher":"静岡大学大学院電子科学研究科","subitem_publisher_language":"ja"}]},"item_29_relation_24":{"attribute_name":"NDL書誌ID","attribute_value_mlt":[{"subitem_relation_name":[{"subitem_relation_name_text":"000008291709"}]}]},"item_29_source_id_19":{"attribute_name":"ISSN","attribute_value_mlt":[{"subitem_source_identifier":"03885070","subitem_source_identifier_type":"PISSN"}]},"item_29_source_id_23":{"attribute_name":"NII書誌ID","attribute_value_mlt":[{"subitem_source_identifier":"AN00103168","subitem_source_identifier_type":"NCID"}]},"item_29_subject_8":{"attribute_name":"NDC","attribute_value_mlt":[{"subitem_subject":"541","subitem_subject_scheme":"NDC"}]},"item_29_version_type_32":{"attribute_name":"著者版フラグ","attribute_value_mlt":[{"subitem_version_resource":"http://purl.org/coar/version/c_970fb48d4fbd8a85","subitem_version_type":"VoR"}]},"item_access_right":{"attribute_name":"アクセス権","attribute_value_mlt":[{"subitem_access_right":"open access","subitem_access_right_uri":"http://purl.org/coar/access_right/c_abf2"}]},"item_creator":{"attribute_name":"著者","attribute_type":"creator","attribute_value_mlt":[{"creatorNames":[{"creatorName":"中村, 慎吾","creatorNameLang":"ja"}],"nameIdentifiers":[{},{},{}]}]},"item_files":{"attribute_name":"ファイル情報","attribute_type":"file","attribute_value_mlt":[{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-12-14"}],"displaytype":"detail","filename":"28-0110-128.pdf","filesize":[{"value":"61.1 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"28-0110-128.pdf","url":"https://shizuoka.repo.nii.ac.jp/record/913/files/28-0110-128.pdf"},"version_id":"7630752c-3673-47d4-b5af-86e0f0e14ae8"},{"accessrole":"open_date","date":[{"dateType":"Available","dateValue":"2017-12-14"}],"displaytype":"detail","filename":"28-0110.pdf","filesize":[{"value":"332.8 kB"}],"format":"application/pdf","licensetype":"license_note","mimetype":"application/pdf","url":{"label":"28-0110.pdf","url":"https://shizuoka.repo.nii.ac.jp/record/913/files/28-0110.pdf"},"version_id":"bc04c5d5-93a8-4b40-bec8-9b668f7e1e86"}]},"item_language":{"attribute_name":"言語","attribute_value_mlt":[{"subitem_language":"jpn"}]},"item_resource_type":{"attribute_name":"資源タイプ","attribute_value_mlt":[{"resourcetype":"other","resourceuri":"http://purl.org/coar/resource_type/c_1843"}]},"item_title":"ホットウォール法によるInAsSb結晶の組成制御とバッファ層導入効果に関する研究","item_titles":{"attribute_name":"タイトル","attribute_value_mlt":[{"subitem_title":"ホットウォール法によるInAsSb結晶の組成制御とバッファ層導入効果に関する研究","subitem_title_language":"ja"},{"subitem_title":"Composition control and the effect of buffer layer in InAsSb epilayers grown by Hot Wall Epitaxy","subitem_title_language":"en"}]},"item_type_id":"29","owner":"3","path":["227"],"pubdate":{"attribute_name":"PubDate","attribute_value":"2008-03-31"},"publish_date":"2008-03-31","publish_status":"0","recid":"913","relation_version_is_last":true,"title":["ホットウォール法によるInAsSb結晶の組成制御とバッファ層導入効果に関する研究"],"weko_creator_id":"3","weko_shared_id":-1},"updated":"2024-02-19T06:04:50.648488+00:00"}