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01aA02 熱パルス法を用いた均一組成InGaSb結晶成長(半導体バルク(1),第36回結晶成長国内会議)
http://hdl.handle.net/10297/2742
http://hdl.handle.net/10297/2742f19c5fb7-62e1-452f-b9db-75855354f24e
名前 / ファイル | ライセンス | アクション |
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081114074.pdf (113.4 kB)
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Item type | 学術雑誌論文 / Journal Article_01(1) | |||||||||
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公開日 | 2008-11-14 | |||||||||
タイトル | ||||||||||
タイトル | 01aA02 熱パルス法を用いた均一組成InGaSb結晶成長(半導体バルク(1),第36回結晶成長国内会議) | |||||||||
言語 | ||||||||||
言語 | jpn | |||||||||
資源タイプ | ||||||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_6501 | |||||||||
資源タイプ | journal article | |||||||||
タイトル(別言語) | ||||||||||
その他のタイトル | 01aA02 Growth of homogeneous InGaSb crystals using heat pulse technique(NCCG-36) | |||||||||
著者 |
疋田, 卓也
× 疋田, 卓也× 村上, 倫章× 小山, 忠信× 百瀬, 与志美× 熊川, 征司
WEKO
2333
× 早川, 泰弘
WEKO
2330
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書誌情報 |
日本結晶成長学会誌 巻 33, 号 4, p. 178-178, 発行日 2006-11-01 |
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出版者 | ||||||||||
出版者 | 日本結晶成長学会 | |||||||||
権利情報 | ||||||||||
権利情報 | (C)日本結晶成長学会: 本文データは学協会の許諾に基づきCiNiiから複製したものである | |||||||||
NDC | ||||||||||
主題Scheme | NDC | |||||||||
主題 | 549 | |||||||||
ISSN | ||||||||||
収録物識別子タイプ | ISSN | |||||||||
収録物識別子 | 03856275 | |||||||||
NII論文ID | ||||||||||
関連タイプ | isIdenticalTo | |||||||||
識別子タイプ | NAID | |||||||||
関連識別子 | 110006208536 | |||||||||
NII書誌ID | ||||||||||
収録物識別子タイプ | NCID | |||||||||
収録物識別子 | AN00188386 | |||||||||
フォーマット | ||||||||||
内容記述タイプ | Other | |||||||||
内容記述 | application/pdf | |||||||||
著者版フラグ | ||||||||||
出版タイプ | VoR | |||||||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |