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ホットウォール法によるInAsSb結晶の組成制御とバッファ層導入効果に関する研究
http://hdl.handle.net/10297/1175
http://hdl.handle.net/10297/1175b9e12726-339d-4f7c-a8cd-fa9c137026ae
名前 / ファイル | ライセンス | アクション |
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28-0110-128.pdf (61.1 kB)
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28-0110.pdf (332.8 kB)
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Item type | その他 / Others(1) | |||||
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公開日 | 2008-03-31 | |||||
タイトル | ||||||
言語 | ja | |||||
タイトル | ホットウォール法によるInAsSb結晶の組成制御とバッファ層導入効果に関する研究 | |||||
タイトル | ||||||
言語 | en | |||||
タイトル | Composition control and the effect of buffer layer in InAsSb epilayers grown by Hot Wall Epitaxy | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_1843 | |||||
資源タイプ | other | |||||
アクセス権 | ||||||
アクセス権 | open access | |||||
アクセス権URI | http://purl.org/coar/access_right/c_abf2 | |||||
著者 |
中村, 慎吾
× 中村, 慎吾 |
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書誌情報 |
ja : 静岡大学大学院電子科学研究科研究報告 巻 28, p. 110-112, 発行日 2007-03-22 |
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出版者 | ||||||
言語 | ja | |||||
出版者 | 静岡大学大学院電子科学研究科 | |||||
NDC | ||||||
主題Scheme | NDC | |||||
主題 | 541 | |||||
注記 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 博士学位論文の要旨 学位記番号:工博甲第282号 | |||||
報告番号 | ||||||
内容記述タイプ | Other | |||||
内容記述 | 甲第453号 | |||||
ISSN | ||||||
収録物識別子タイプ | PISSN | |||||
収録物識別子 | 03885070 | |||||
NII書誌ID | ||||||
収録物識別子タイプ | NCID | |||||
収録物識別子 | AN00103168 | |||||
NDL書誌ID | ||||||
関連名称 | 000008291709 | |||||
フォーマット | ||||||
内容記述タイプ | Other | |||||
内容記述 | application/pdf | |||||
著者版フラグ | ||||||
出版タイプ | VoR | |||||
出版タイプResource | http://purl.org/coar/version/c_970fb48d4fbd8a85 |